RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Panram International Corporation PUD42400C154G4NJK 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Panram International Corporation PUD42400C154G4NJK 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Panram International Corporation PUD42400C154G4NJK 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Panram International Corporation PUD42400C154G4NJK 4GB
Report a bug
Below the latency in the PassMark tests, ns
21
24
Around -14% lower latency
Faster reading speed, GB/s
18.4
16
Average value in the tests
Faster write speed, GB/s
12.8
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Panram International Corporation PUD42400C154G4NJK 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
21
Read speed, GB/s
16.0
18.4
Write speed, GB/s
12.5
12.8
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
2980
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Panram International Corporation PUD42400C154G4NJK 4GB RAM comparisons
Kingston ACR32D4U2S8HD-8X 8GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5471-020.A00LF 4GB
Corsair CMD16GX4M4B3000C15 4GB
Crucial Technology CT25664BA160B.C16F 2GB
G Skill Intl F4-3200C16-16GTZA 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Teikon TMA81GU6AFR8N-UHSC 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Panram International Corporation PUD42400C154G4NJK 4GB
Samsung 1600 CL10 Series 8GB
Mushkin MR[A/B]4U300JJJM8G 8GB
Samsung M393B1G70BH0-YK0 8GB
Avant Technology W642GU42J5213N 16GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3600C14-16GTZN 16GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Kingston KHX2133C14S4/16G 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
AMD R538G1601U2S-UO 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Kingston 99U5403-036.A00G 4GB
Corsair CMR128GX4M8Z2933C16 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
SK Hynix HMA82GS6MFR8N-TF 16GB
SK Hynix HYMP112S64CP6-S6 1GB
G Skill Intl F4-3200C16-8GTZRX 8GB
Report a bug
×
Bug description
Source link