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Micron Technology 4ATF51264HZ-2G3B1 4GB
Samsung M471A1K43CB1-CRC 8GB
Compare
Micron Technology 4ATF51264HZ-2G3B1 4GB vs Samsung M471A1K43CB1-CRC 8GB
Overall score
Micron Technology 4ATF51264HZ-2G3B1 4GB
Overall score
Samsung M471A1K43CB1-CRC 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 4ATF51264HZ-2G3B1 4GB
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Below the latency in the PassMark tests, ns
35
37
Around 5% lower latency
Faster reading speed, GB/s
14.8
13.9
Average value in the tests
Faster write speed, GB/s
11.2
9.9
Average value in the tests
Reasons to consider
Samsung M471A1K43CB1-CRC 8GB
Report a bug
Specifications
Complete list of technical specifications
Micron Technology 4ATF51264HZ-2G3B1 4GB
Samsung M471A1K43CB1-CRC 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
35
37
Read speed, GB/s
14.8
13.9
Write speed, GB/s
11.2
9.9
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2336
2389
Micron Technology 4ATF51264HZ-2G3B1 4GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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Samsung M471A1K43CB1-CRC 8GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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