Micron Technology 8KTF25664HZ-1G4M1 2GB
Samsung M471B5673FH0-CF8 2GB

Micron Technology 8KTF25664HZ-1G4M1 2GB vs Samsung M471B5673FH0-CF8 2GB

Overall score
star star star star star
Micron Technology 8KTF25664HZ-1G4M1 2GB

Micron Technology 8KTF25664HZ-1G4M1 2GB

Overall score
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Differences

  • Faster write speed, GB/s
    7.2 left arrow 6.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    10600 left arrow 8500
    Around 1.25% higher bandwidth
  • Below the latency in the PassMark tests, ns
    30 left arrow 41
    Around -37% lower latency
  • Faster reading speed, GB/s
    10.6 left arrow 10
    Average value in the tests

Specifications

Complete list of technical specifications
Micron Technology 8KTF25664HZ-1G4M1 2GB
Samsung M471B5673FH0-CF8 2GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    41 left arrow 30
  • Read speed, GB/s
    10.0 left arrow 10.6
  • Write speed, GB/s
    7.2 left arrow 6.8
  • Memory bandwidth, mbps
    10600 left arrow 8500
Other
  • Description
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 left arrow PC3-8500, 1.5V, CAS Supported: 5 6 7 8
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1066 MHz
  • Ranking PassMark (The more the better)
    1210 left arrow 1479
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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