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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Compare
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Overall score
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Overall score
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Report a bug
Reasons to consider
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
35
Around -25% lower latency
Faster reading speed, GB/s
18.1
13.7
Average value in the tests
Faster write speed, GB/s
15.6
9.6
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
35
28
Read speed, GB/s
13.7
18.1
Write speed, GB/s
9.6
15.6
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2312
3693
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM comparisons
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Chun Well Technology Holding Limited MD4U1636181DCW 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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Chun Well Technology Holding Limited MD4U1636181DCW 16G
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