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Samsung M3 78T2863EHS-CF7 1GB
Inmos + 256MB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Inmos + 256MB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Inmos + 256MB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
11.5
Average value in the tests
Reasons to consider
Inmos + 256MB
Report a bug
Below the latency in the PassMark tests, ns
30
59
Around -97% lower latency
Faster write speed, GB/s
9.1
2,123.3
Average value in the tests
Higher memory bandwidth, mbps
16800
6400
Around 2.63 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Inmos + 256MB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
30
Read speed, GB/s
4,833.8
11.5
Write speed, GB/s
2,123.3
9.1
Memory bandwidth, mbps
6400
16800
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
5-5-5-15 / 800 MHz
no data
Ranking PassMark (The more the better)
731
2318
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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