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Samsung M378B5673EH1-CF8 2GB
Samsung M378B5773CH0-CH9 2GB
Compare
Samsung M378B5673EH1-CF8 2GB vs Samsung M378B5773CH0-CH9 2GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
Samsung M378B5773CH0-CH9 2GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
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Below the latency in the PassMark tests, ns
28
39
Around 28% lower latency
Faster write speed, GB/s
7.5
7.4
Average value in the tests
Reasons to consider
Samsung M378B5773CH0-CH9 2GB
Report a bug
Faster reading speed, GB/s
12.8
12.7
Average value in the tests
Higher memory bandwidth, mbps
10600
8500
Around 1.25 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5773CH0-CH9 2GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
28
39
Read speed, GB/s
12.7
12.8
Write speed, GB/s
7.5
7.4
Memory bandwidth, mbps
8500
10600
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
Timings / Clock speed
7-7-7-20 / 1066 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)
1988
1770
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
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