RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung SF4721G4CKHH6DFSDS 8GB
Compare
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Samsung SF4721G4CKHH6DFSDS 8GB
Overall score
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Overall score
Samsung SF4721G4CKHH6DFSDS 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Report a bug
Faster reading speed, GB/s
3
10.4
Average value in the tests
Reasons to consider
Samsung SF4721G4CKHH6DFSDS 8GB
Report a bug
Below the latency in the PassMark tests, ns
31
63
Around -103% lower latency
Faster write speed, GB/s
5.3
1,447.3
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung SF4721G4CKHH6DFSDS 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
63
31
Read speed, GB/s
3,231.0
10.4
Write speed, GB/s
1,447.3
5.3
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
478
1740
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM comparisons
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
Samsung SF4721G4CKHH6DFSDS 8GB RAM comparisons
Samsung M395T2863QZ4-CF76 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung SF4721G4CKHH6DFSDS 8GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Patriot Memory (PDP Systems) 2666 C16 Series 8GB
G Skill Intl F5-5600J4040C16G 16GB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-3000C15-8GVRB 8GB
Samsung M471B5273CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A
AMD R5316G1609U2K 8GB
Kingston KHX2400C15S4/4G 4GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-2666C19-8GVR 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
Mushkin 991679ES 996679ES 2GB
Wilk Elektronik S.A. GR2400S464L17S/8G 8GB
SK Hynix HYMP164U64CP6-Y5 512MB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
SK Hynix HYMP112S64CP6-S6 1GB
G Skill Intl F4-2400C15-16GVR 16GB
Kingston K531R8-MIN 4GB
Kingston 9965600-012.A02G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Chun Well Technology Holding Limited MD4U1632160DCW 16G
Samsung M471B5273DH0-CH9 4GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G
Report a bug
×
Bug description
Source link