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Strontium EVMT8G1600U86S 8GB
Samsung SF4721G4CKHH6DFSDS 8GB
Compare
Strontium EVMT8G1600U86S 8GB vs Samsung SF4721G4CKHH6DFSDS 8GB
Overall score
Strontium EVMT8G1600U86S 8GB
Overall score
Samsung SF4721G4CKHH6DFSDS 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Strontium EVMT8G1600U86S 8GB
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Faster reading speed, GB/s
11.7
10.4
Average value in the tests
Faster write speed, GB/s
7.2
5.3
Average value in the tests
Reasons to consider
Samsung SF4721G4CKHH6DFSDS 8GB
Report a bug
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Strontium EVMT8G1600U86S 8GB
Samsung SF4721G4CKHH6DFSDS 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
31
31
Read speed, GB/s
11.7
10.4
Write speed, GB/s
7.2
5.3
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1990
1740
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RAM Latency Calculator
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