RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
takeMS International AG TMS2GB264D083805EV 2GB
SK Hynix HMA81GU6CJR8N-UH 8GB
Compare
takeMS International AG TMS2GB264D083805EV 2GB vs SK Hynix HMA81GU6CJR8N-UH 8GB
Overall score
takeMS International AG TMS2GB264D083805EV 2GB
Overall score
SK Hynix HMA81GU6CJR8N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
takeMS International AG TMS2GB264D083805EV 2GB
Report a bug
Faster reading speed, GB/s
3
16.4
Average value in the tests
Reasons to consider
SK Hynix HMA81GU6CJR8N-UH 8GB
Report a bug
Below the latency in the PassMark tests, ns
27
50
Around -85% lower latency
Faster write speed, GB/s
11.2
1,457.4
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
takeMS International AG TMS2GB264D083805EV 2GB
SK Hynix HMA81GU6CJR8N-UH 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
50
27
Read speed, GB/s
3,757.3
16.4
Write speed, GB/s
1,457.4
11.2
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
557
2632
takeMS International AG TMS2GB264D083805EV 2GB RAM comparisons
Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SK Hynix HMA81GU6CJR8N-UH 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Apacer Technology 78.C1GET.9K10C 8GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
Samsung M323R2GA3BB0-CQKOD 16GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3400C16-16GTZ 16GB
takeMS International AG TMS2GB264D083805EV 2GB
SK Hynix HMA81GU6CJR8N-UH 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 16ATF2G64AZ-2G1A1 16GB
Crucial Technology CT25664AA800.M16FM 2GB
Apacer Technology 78.CAGP7.AFW0C 8GB
Samsung M378B5673EH1-CF8 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666
AMD AE34G1601U1 4GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-4400C18-8GTRG 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-2800C15-4GVRB 4GB
Samsung M393B1K70QB0-CK0 8GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Chun Well Technology Holding Limited CL16-20-20 D4-3000
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3000C15-8GVRB 8GB
Mushkin 994083 4GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
Report a bug
×
Bug description
Source link