RAM
DDR5
DDR4
DDR3
DDR2
Über die Website
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Über die Website
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
RAM 1 auswählen
RAM 2 auswählen
Vergleichen Sie
DDR2 RAM-Liste
Alle Speichermodule, sortiert nach steigender Latenz
№
Bandbreite
Latenzzeit, ns
Lesegeschwindigkeit, GB/s
Schreibgeschwindigkeit, GB/s
№
2541
RAM
Samsung M395T5750GZ4-CE63 2GB
Latency
119
Read speed
2,807.6
Write speed
2,170.7
№
2542
RAM
Wintec Industries LEX010GD2667Q-SE 1GB
Latency
119
Read speed
3,462.6
Write speed
828.7
№
2543
RAM
AENEON AET760SD00-30DC07X 1GB
Latency
120
Read speed
1,198.9
Write speed
1,005.0
№
2544
RAM
Nanya Technology M2N1G64TUH8D5F-3C 1GB
Latency
120
Read speed
1,582.0
Write speed
582.1
№
2545
RAM
Micron Technology 36HF51272FD667E1D6 4GB
Latency
121
Read speed
3,223.2
Write speed
2,379.2
№
2546
RAM
Kingston DNU540DR4NABND1 2GB
Latency
122
Read speed
1,699.0
Write speed
1,024.8
№
2547
RAM
Nanya Technology NT1GT72U89D0BD-AC 1GB
Latency
123
Read speed
1,528.3
Write speed
1,049.9
№
2548
RAM
Qimonda 72T128000HP3SB 1GB
Latency
123
Read speed
2,689.1
Write speed
1,916.2
№
2549
RAM
SK Hynix HMP112S6EFR6C-S6 1GB
Latency
123
Read speed
4,591.6
Write speed
2,367.8
№
2550
RAM
SK Hynix HYMP564S64BP6-C4 512MB
Latency
123
Read speed
952.4
Write speed
404.9
№
2551
RAM
Samsung M395T2953CZ3-CE6 1GB
Latency
124
Read speed
2,254.8
Write speed
1,807.9
№
2552
RAM
Micron Technology 18HF25672JD667E1D4 2GB
Latency
124
Read speed
2,831.9
Write speed
1,661.3
№
2553
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP525F72BP4N2-C4 2GB
Latency
124
Read speed
2,847.0
Write speed
1,817.2
№
2554
RAM
Micron Technology 36HTF25672F667F1E4 2GB
Latency
127
Read speed
2,735.5
Write speed
1,675.4
№
2555
RAM
Kingston DDR2 PC800MHz 2GB
Latency
128
Read speed
2,702.2
Write speed
1,531.8
№
2556
RAM
Qimonda 72T256420ELA2.5C 2GB
Latency
128
Read speed
2,579.9
Write speed
2,077.3
№
2557
RAM
Qimonda 72T256420HFN3SB 2GB
Latency
129
Read speed
2,340.1
Write speed
1,647.4
№
2558
RAM
Smart Modular SG564568FG8NWIL-Z2 2GB
Latency
130
Read speed
1,943.5
Write speed
1,126.1
№
2559
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F72BP8N3-C4 1GB
Latency
131
Read speed
1,165.1
Write speed
981.1
№
2560
RAM
Kingston 9905295-020.B00LF 1GB
Latency
134
Read speed
2,042.6
Write speed
1,239.2
«
124
125
126
127
128
129
»
Letzte Vergleiche
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingmax Semiconductor GSAG42F-18---------- 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston HP32D4S2S1ME-8 8GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-2666C15-8GVR 8GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston KHX2133C13D4/4GX 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston 9905702-020.A00G 8GB
PUSKILL PJ16TFK1GM8 16GB
Corsair CM5S16GM4800A40K2 16GB
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-2800C16-8GRR 8GB
Corsair CML16GX3M2A1600C10 8GB
Ramaxel Technology RMSA3260MH78HAF-2666 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Kingston KHX3000C15/16GX 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
A-DATA Technology DQVE1908 512MB
Avant Technology J642GU42J2320NQ 16GB
Kingston 99U5474-010.A00LF 2GB
Kingston 9905711-007.A00G 4GB
Samsung M393B1K70CH0-YH9 8GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
G Skill Intl F5-6400J3239G16G 16GB
Golden Empire CL15-15-15 D4-2400 4GB
Einen Fehler melden
×
Bug description
Source link
Русский 
English 
Español 
Português 
Français 
Italiano 
Polski 
中文 
日本語 
