RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Select RAM 1
Select RAM 2
Porównaj
DDR2 Lista pamięci RAM
Wszystkie moduły pamięci, posortowane według rosnącego opóźnienia
№
Szerokość pasma
Opóźnienie, ns
Prędkość odczytu, GB/s
Prędkość zapisu, GB/s
№
2541
RAM
Samsung M395T5750GZ4-CE63 2GB
Latency
119
Read speed
2,807.6
Write speed
2,170.7
№
2542
RAM
Wintec Industries LEX010GD2667Q-SE 1GB
Latency
119
Read speed
3,462.6
Write speed
828.7
№
2543
RAM
AENEON AET760SD00-30DC07X 1GB
Latency
120
Read speed
1,198.9
Write speed
1,005.0
№
2544
RAM
Nanya Technology M2N1G64TUH8D5F-3C 1GB
Latency
120
Read speed
1,582.0
Write speed
582.1
№
2545
RAM
Micron Technology 36HF51272FD667E1D6 4GB
Latency
121
Read speed
3,223.2
Write speed
2,379.2
№
2546
RAM
Kingston DNU540DR4NABND1 2GB
Latency
122
Read speed
1,699.0
Write speed
1,024.8
№
2547
RAM
Nanya Technology NT1GT72U89D0BD-AC 1GB
Latency
123
Read speed
1,528.3
Write speed
1,049.9
№
2548
RAM
Qimonda 72T128000HP3SB 1GB
Latency
123
Read speed
2,689.1
Write speed
1,916.2
№
2549
RAM
SK Hynix HMP112S6EFR6C-S6 1GB
Latency
123
Read speed
4,591.6
Write speed
2,367.8
№
2550
RAM
SK Hynix HYMP564S64BP6-C4 512MB
Latency
123
Read speed
952.4
Write speed
404.9
№
2551
RAM
Samsung M395T2953CZ3-CE6 1GB
Latency
124
Read speed
2,254.8
Write speed
1,807.9
№
2552
RAM
Micron Technology 18HF25672JD667E1D4 2GB
Latency
124
Read speed
2,831.9
Write speed
1,661.3
№
2553
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP525F72BP4N2-C4 2GB
Latency
124
Read speed
2,847.0
Write speed
1,817.2
№
2554
RAM
Micron Technology 36HTF25672F667F1E4 2GB
Latency
127
Read speed
2,735.5
Write speed
1,675.4
№
2555
RAM
Kingston DDR2 PC800MHz 2GB
Latency
128
Read speed
2,702.2
Write speed
1,531.8
№
2556
RAM
Qimonda 72T256420ELA2.5C 2GB
Latency
128
Read speed
2,579.9
Write speed
2,077.3
№
2557
RAM
Qimonda 72T256420HFN3SB 2GB
Latency
129
Read speed
2,340.1
Write speed
1,647.4
№
2558
RAM
Smart Modular SG564568FG8NWIL-Z2 2GB
Latency
130
Read speed
1,943.5
Write speed
1,126.1
№
2559
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F72BP8N3-C4 1GB
Latency
131
Read speed
1,165.1
Write speed
981.1
№
2560
RAM
Kingston 9905295-020.B00LF 1GB
Latency
134
Read speed
2,042.6
Write speed
1,239.2
«
124
125
126
127
128
129
»
Najnowsze porównania
Micron Technology 16JTF51264HZ-1G6M1 4GB
Ramaxel Technology RMSA3260MH78H8H-2666 8GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BL8G32C16U4R.M8FE 8GB
Samsung M391B5673EH1-CH9 2GB
Kingston MSI26D4S9D8ME-16 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
HT Micron HTH5AN8G8NCJR-VKD 8GB
Samsung M471A5143SB1-CRC 4GB
Kingston 9965669-027.A00G 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-3200C16-16GTZSW 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Avexir Technologies Corporation T 4GB
Corsair CML16GX3M2A1600C10 8GB
Ramaxel Technology RMSA3260MH78HAF-2666 8GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CM4B8G1J3000K16W4 8GB
Kingston 99U5474-038.A00LF 4GB
Corsair CMD32GX4M4B3600C16 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMD16GX4M2A2400C14 8GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMK16GX4M1Z3600C18 16GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C14-8GTZSK 8GB
Corsair CML16GX3M2A1600C10 8GB
Corsair CMT64GX4M4K3600C18 16GB
Zgłoś błąd
×
Bug description
Source link