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ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Samsung M378A1G43DB0-CPB 8GB
Compare
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB vs Samsung M378A1G43DB0-CPB 8GB
Overall score
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Overall score
Samsung M378A1G43DB0-CPB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Report a bug
Faster reading speed, GB/s
21.4
15
Average value in the tests
Faster write speed, GB/s
14.3
10.3
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Samsung M378A1G43DB0-CPB 8GB
Report a bug
Below the latency in the PassMark tests, ns
36
37
Around -3% lower latency
Specifications
Complete list of technical specifications
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Samsung M378A1G43DB0-CPB 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
37
36
Read speed, GB/s
21.4
15.0
Write speed, GB/s
14.3
10.3
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
3448
2569
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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