RAM comparison Corsair CMX4GX3M1A1333C9 4GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Corsair CMX4GX3M1A1333C9 4GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Overall score

Corsair CMX4GX3M1A1333C9 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Corsair CMX4GX3M1A1333C9 4GB

Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Below the latency in the PassMark tests, ns

37 40

Around -8% lower latency
Faster reading speed, GB/s

16 12.8

Average value in the tests
Faster write speed, GB/s

12.6 7.0

Average value in the tests
Higher memory bandwidth, mbps

19200 10600

Around 1.81 higher bandwidth

Complete list of technical specifications

Corsair CMX4GX3M1A1333C9 4GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2021 2808

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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