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Corsair CMY8GX3M2A2666C10 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Compare
Corsair CMY8GX3M2A2666C10 4GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Overall score
Corsair CMY8GX3M2A2666C10 4GB
Overall score
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Corsair CMY8GX3M2A2666C10 4GB
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Below the latency in the PassMark tests, ns
17
37
Around 54% lower latency
Faster reading speed, GB/s
22.8
16
Average value in the tests
Faster write speed, GB/s
15.4
12.6
Average value in the tests
Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Corsair CMY8GX3M2A2666C10 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
17
37
Read speed, GB/s
22.8
16.0
Write speed, GB/s
15.4
12.6
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
3391
2808
Corsair CMY8GX3M2A2666C10 4GB RAM comparisons
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Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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