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Corsair CMZ16GX3M2A2400C10 8GB
Samsung M471A5644EB0-CPB 2GB

Corsair CMZ16GX3M2A2400C10 8GB vs Samsung M471A5644EB0-CPB 2GB

Overall score
star star star star star
Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Overall score
star star star star star
Samsung M471A5644EB0-CPB 2GB

Samsung M471A5644EB0-CPB 2GB

Differences Specifications Comments

Differences

Corsair CMZ16GX3M2A2400C10 8GB Reasons to consider
Corsair CMZ16GX3M2A2400C10 8GB
Report a bug
Samsung M471A5644EB0-CPB 2GB Reasons to consider
Samsung M471A5644EB0-CPB 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 37
    Around -32% lower latency
  • Faster reading speed, GB/s
    13.2 left arrow 11.4
    Average value in the tests
  • Faster write speed, GB/s
    9.1 left arrow 7.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Corsair CMZ16GX3M2A2400C10 8GB
Samsung M471A5644EB0-CPB 2GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    37 left arrow 28
  • Read speed, GB/s
    11.4 left arrow 13.2
  • Write speed, GB/s
    7.4 left arrow 9.1
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1683 left arrow 1989

Corsair CMZ16GX3M2A2400C10 8GB RAM comparisons

G Skill Intl F3-2400C11-8-SR 8GB
Corsair CMY16GX3M2A2400C11 8GB

Samsung M471A5644EB0-CPB 2GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
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