RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hexon Technology Pte Ltd HEXON 1GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
Compare
Hexon Technology Pte Ltd HEXON 1GB vs Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
Overall score
Hexon Technology Pte Ltd HEXON 1GB
Overall score
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hexon Technology Pte Ltd HEXON 1GB
Report a bug
Faster reading speed, GB/s
3
16.8
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
Report a bug
Below the latency in the PassMark tests, ns
35
62
Around -77% lower latency
Faster write speed, GB/s
13.7
1,843.6
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Hexon Technology Pte Ltd HEXON 1GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
62
35
Read speed, GB/s
3,556.6
16.8
Write speed, GB/s
1,843.6
13.7
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
542
3306
Hexon Technology Pte Ltd HEXON 1GB RAM comparisons
SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5474-013.A00LF 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
G Skill Intl F4-3200C14-16GVR 16GB
A-DATA Technology AD73I1B1672EG 2GB
Corsair CMD16GX4M4B3333C16 4GB
Hexon Technology Pte Ltd HEXON 1GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400
Kingston 99U5315-023.A00LF 512MB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Samsung M471A1K43EB1-CWE 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
Kingston 99U5584-005.A00LF 4GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3600C18-8GVK 8GB
Kingston 9905403-500.A01LF 8GB
G Skill Intl F4-3600C19-8GSXW 8GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMW64GX4M4A2666C16 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Micron Technology AFLD48EH1P 8GB
Samsung M471B5173DB0-YK0 4GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
Report a bug
×
Bug description
Source link