Hexon Technology Pte Ltd HEXON 1GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

Hexon Technology Pte Ltd HEXON 1GB vs Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

总分
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分
star star star star star
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

差异

  • 更快的读取速度,GB/s
    3 left arrow 16.8
    测试中的平均数值
  • 低于PassMark测试中的延时,ns
    35 left arrow 62
    左右 -77% 更低的延时
  • 更快的写入速度,GB/s
    13.7 left arrow 1,843.6
    测试中的平均数值
  • 更高的内存带宽,mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时,ns
    62 left arrow 35
  • 读取速度,GB/s
    3,556.6 left arrow 16.8
  • 写入速度,GB/s
    1,843.6 left arrow 13.7
  • 内存带宽,mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    542 left arrow 3306
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最新比较