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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Inmos + 256MB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Inmos + 256MB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Inmos + 256MB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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Below the latency in the PassMark tests, ns
24
30
Around 20% lower latency
Faster reading speed, GB/s
16
11.5
Average value in the tests
Faster write speed, GB/s
12.5
9.1
Average value in the tests
Higher memory bandwidth, mbps
19200
16800
Around 1.14% higher bandwidth
Reasons to consider
Inmos + 256MB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Inmos + 256MB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
30
Read speed, GB/s
16.0
11.5
Write speed, GB/s
12.5
9.1
Memory bandwidth, mbps
19200
16800
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
no data
Ranking PassMark (The more the better)
2925
2318
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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RAM 2
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