RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 18ASF2G72AZ-2G6D1 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
25
Around 4% lower latency
Reasons to consider
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Report a bug
Faster reading speed, GB/s
16.8
16
Average value in the tests
Faster write speed, GB/s
12.8
12.5
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
25
Read speed, GB/s
16.0
16.8
Write speed, GB/s
12.5
12.8
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
2989
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9965525-155.A00LF 8GB
Samsung M378A1K43EB2-CVF 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-3200C15-16GVK 16GB
Kingston KHX2133C11D3/4GX 4GB
AMD R748G2400U2S 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Kingston 99P5474-014.A00LF 4GB
Micron Technology 8ATF51264AZ-2G1AY 4GB
Kingston KVR533D2N4 512MB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
PUSKILL DDR3 1600 8G 8GB
Corsair CMW16GX4M2K3600C16 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Corsair CMK16GX4M2Z3600C14 8GB
Crucial Technology CB8GS2666.C8ET 8GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
Qimonda 64T128020EDL2.5C2 1GB
Panram International Corporation W4N2666PS-8G 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N
Samsung M378B5273CH0-CH9 4GB
Crucial Technology BLS4G4D240FSA.8FAR 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Mushkin MRB4U300GJJM16G 16GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-4266C19-32GTZR 32GB
Report a bug
×
Bug description
Source link