RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M378A1G44AB0-CWE 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M378A1G44AB0-CWE 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Samsung M378A1G44AB0-CWE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
38
Around 37% lower latency
Faster write speed, GB/s
12.5
10.9
Average value in the tests
Reasons to consider
Samsung M378A1G44AB0-CWE 8GB
Report a bug
Faster reading speed, GB/s
16.5
16
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M378A1G44AB0-CWE 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
38
Read speed, GB/s
16.0
16.5
Write speed, GB/s
12.5
10.9
Memory bandwidth, mbps
19200
25600
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2925
2829
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Samsung M378A1G44AB0-CWE 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-174.A00LF 2GB
Crucial Technology BL16G30C15U4R.M16FE1 16GB
Kingston 99U5429-014.A00LF 4GB
Mushkin MRB4U300GJJM16G 16GB
Kingston MSI16D3LS1MNG/8G 8GB
Panram International Corporation PUD43000C164G2NJK 4GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 18ASF1G72PDZ-2G3B1 8GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology CT16G4DFD824A.M16FJ 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Kingston MSI26D4S9D8ME-16 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology CT8G4SFS8213.C8FAD1 8GB
Kingston 99U5584-004.A00LF 4GB
Team Group Inc. TEAMGROUP-SD4-2133 8GB
PNY Electronics PNY 2GB
G Skill Intl F4-3200C16-8GTZB 8GB
Kingston 99U5584-004.A00LF 4GB
A-DATA Technology DDR4 3300 2OZ 4GB
Samsung M3 78T2863QZS-CF7 1GB
Kingston KCDT82-MIE 4GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT16G4DFD832A.M16FJ 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
A-DATA Technology ADOVE1A0834E 1GB
Transcend Information AQD-D4U4GN21-SG 4GB
Report a bug
×
Bug description
Source link