RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston 99U5428-063.A00LF 8GB
Samsung M471A2G43AB2-CWE 16GB
Compare
Kingston 99U5428-063.A00LF 8GB vs Samsung M471A2G43AB2-CWE 16GB
Overall score
Kingston 99U5428-063.A00LF 8GB
Overall score
Samsung M471A2G43AB2-CWE 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingston 99U5428-063.A00LF 8GB
Report a bug
Below the latency in the PassMark tests, ns
42
46
Around 9% lower latency
Reasons to consider
Samsung M471A2G43AB2-CWE 16GB
Report a bug
Faster reading speed, GB/s
15.9
12.2
Average value in the tests
Faster write speed, GB/s
12.8
7.2
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Kingston 99U5428-063.A00LF 8GB
Samsung M471A2G43AB2-CWE 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
46
Read speed, GB/s
12.2
15.9
Write speed, GB/s
7.2
12.8
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2063
2936
Kingston 99U5428-063.A00LF 8GB RAM comparisons
Crucial Technology CT102464BF160B-16F 8GB
Kingston KHX426C13/8G 8GB
Samsung M471A2G43AB2-CWE 16GB RAM comparisons
Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5428-063.A00LF 8GB
Samsung M471A2G43AB2-CWE 16GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
Kingston 99U5315-023.A00LF 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4DFD824A.C16FBR2 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Samsung M393A5143DB0-CRC 4GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4DFS832A.M8FJ 8GB
takeMS International AG TMS2GB264D083805EV 2GB
Crucial Technology CT16G4SFD8213.C16FBR 16GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Avant Technology W6451U66J9266ND 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3200C14-16GTZKY 16GB
Kingston 9905403-156.A00LF 2GB
Kingston KC5N22-MIE 16GB
Samsung M393B1G70BH0-CK0 8GB
Avant Technology J642GU42J7240NF 16GB
Kingston 9905403-011.A03LF 2GB
A-DATA Technology AM2P24HC8T1-BBFS 8GB
Report a bug
×
Bug description
Source link