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Kingston KVR533D2N4 512MB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Compare
Kingston KVR533D2N4 512MB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Overall score
Kingston KVR533D2N4 512MB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingston KVR533D2N4 512MB
Report a bug
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Report a bug
Below the latency in the PassMark tests, ns
23
75
Around -226% lower latency
Faster reading speed, GB/s
17.2
1
Average value in the tests
Faster write speed, GB/s
13.0
1,672.1
Average value in the tests
Higher memory bandwidth, mbps
19200
4200
Around 4.57 higher bandwidth
Specifications
Complete list of technical specifications
Kingston KVR533D2N4 512MB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
75
23
Read speed, GB/s
1,943.5
17.2
Write speed, GB/s
1,672.1
13.0
Memory bandwidth, mbps
4200
19200
Other
Description
PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
4-4-4-12 / 533 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
301
3004
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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