Lexar Co Limited LD4AU016G-H3200GST 16GB
Micron Technology 9ASF51272PZ-2G1A2 4GB

Lexar Co Limited LD4AU016G-H3200GST 16GB vs Micron Technology 9ASF51272PZ-2G1A2 4GB

Overall score
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Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Overall score
star star star star star
Micron Technology 9ASF51272PZ-2G1A2 4GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

Differences

  • Below the latency in the PassMark tests, ns
    33 left arrow 43
    Around 23% lower latency
  • Faster reading speed, GB/s
    17.8 left arrow 11.4
    Average value in the tests
  • Faster write speed, GB/s
    12.5 left arrow 9.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 17000
    Around 1.51% higher bandwidth

Specifications

Complete list of technical specifications
Lexar Co Limited LD4AU016G-H3200GST 16GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    33 left arrow 43
  • Read speed, GB/s
    17.8 left arrow 11.4
  • Write speed, GB/s
    12.5 left arrow 9.5
  • Memory bandwidth, mbps
    25600 left arrow 17000
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    3285 left arrow 2532
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