RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Lexar Co Limited LD4AS008G-H2666GST 8GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Lexar Co Limited LD4AS008G-H2666GST 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Faster write speed, GB/s
11.8
10.2
Average value in the tests
Higher memory bandwidth, mbps
25600
21300
Around 1.2% higher bandwidth
Reasons to consider
Lexar Co Limited LD4AS008G-H2666GST 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
51
Around -76% lower latency
Faster reading speed, GB/s
15.8
15.6
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
29
Read speed, GB/s
15.6
15.8
Write speed, GB/s
11.8
10.2
Memory bandwidth, mbps
25600
21300
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2687
2708
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Lexar Co Limited LD4AS008G-H2666GST 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F4-4000C14-16GTZR 16GB
InnoDisk Corporation M4S0-8GSSOCRG 8GB
PUSKILL DDR3 1600 8G 8GB
Crucial Technology CT16G4DFD8213.M16FA 16GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Teikon TMA851S6CJR6N-VKSC 4GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology CT16G4SFD824A.C16FJ 16GB
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMH16GX4M2Z3600C18 8GB
Samsung M3 78T2863EHS-CF7 1GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C
Asgard VMA45UG-MEC1U2AW2 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kingston 9905624-019.A00G 8GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3600C19-8GSXKB 8GB
AMD R5316G1609U2K 8GB
Micron Technology 18ASF1G72PDZ-2G3A2 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-3466C16-8GTZR 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston MSI24D4S7D8MB-8 8GB
Report a bug
×
Bug description
Source link