RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Compare
Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Overall score
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Report a bug
Faster reading speed, GB/s
4
16.2
Average value in the tests
Faster write speed, GB/s
2,256.8
12.7
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
64
Around -129% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
64
28
Read speed, GB/s
4,651.3
16.2
Write speed, GB/s
2,256.8
12.7
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
837
2417
Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM comparisons
G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB RAM comparisons
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT51264BF160BJ.M8F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Samsung M471B5173QH0-YK0 4GB
Kingston K821PJ-MIB 16GB
Kingston 9905403-011.A03LF 2GB
Samsung M393A1G43DB0-CPB 8GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-2400C17-8GIS 8GB
Corsair CMX4GX3M1A1333C9 4GB
Crucial Technology CT8G4DFRA32A.M4FF 8GB
AMD R5S38G1601U2S 8GB
Crucial Technology BL16G36C16U4R.M8FB1 16GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston HP32D4U8S8HC-8XR 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Crucial Technology CT16G4SFD824A.M16FB 16GB
Kingston 99U5428-018.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
PNY Electronics PNY 2GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
Kingston 99U5469-045.A00LF 4GB
Kingston 9965669-008.A03G 16GB
Report a bug
×
Bug description
Source link