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PUSKILL PJ8TFK1GM8 8GB
Samsung M378A1G44AB0-CWE 8GB

PUSKILL PJ8TFK1GM8 8GB vs Samsung M378A1G44AB0-CWE 8GB

Overall score
star star star star star
PUSKILL PJ8TFK1GM8 8GB

PUSKILL PJ8TFK1GM8 8GB

Overall score
star star star star star
Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

Differences Specifications Comments

Differences

PUSKILL PJ8TFK1GM8 8GB Reasons to consider
PUSKILL PJ8TFK1GM8 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    34 left arrow 38
    Around 11% lower latency
  • Faster write speed, GB/s
    12.9 left arrow 10.9
    Average value in the tests
Samsung M378A1G44AB0-CWE 8GB Reasons to consider
Samsung M378A1G44AB0-CWE 8GB
Report a bug
  • Faster reading speed, GB/s
    16.5 left arrow 13.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 19200
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
PUSKILL PJ8TFK1GM8 8GB
Samsung M378A1G44AB0-CWE 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    34 left arrow 38
  • Read speed, GB/s
    13.1 left arrow 16.5
  • Write speed, GB/s
    12.9 left arrow 10.9
  • Memory bandwidth, mbps
    19200 left arrow 25600
Other
  • Description
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2608 left arrow 2829

PUSKILL PJ8TFK1GM8 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M378A1G44AB0-CWE 8GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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