RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
en
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M3 78T3354BZ0-CCC 256MB
A-DATA Technology DDR4 2666 8GB

Samsung M3 78T3354BZ0-CCC 256MB vs A-DATA Technology DDR4 2666 8GB

Overall score
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Overall score
star star star star star
A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

Differences Specifications Comments

Differences

Samsung M3 78T3354BZ0-CCC 256MB Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
  • Faster reading speed, GB/s
    2 left arrow 15.5
    Average value in the tests
A-DATA Technology DDR4 2666 8GB Reasons to consider
A-DATA Technology DDR4 2666 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    32 left arrow 46
    Around -44% lower latency
  • Faster write speed, GB/s
    11.8 left arrow 1,519.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 3200
    Around 6.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
A-DATA Technology DDR4 2666 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    46 left arrow 32
  • Read speed, GB/s
    2,909.8 left arrow 15.5
  • Write speed, GB/s
    1,519.2 left arrow 11.8
  • Memory bandwidth, mbps
    3200 left arrow 21300
Other
  • Description
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    3-3-3-12 / 400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    241 left arrow 2968

Samsung M3 78T3354BZ0-CCC 256MB RAM comparisons

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

A-DATA Technology DDR4 2666 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
G Skill Intl F4-3000C16-8GTRS 8GB
G Skill Intl F4-3000C16-8GTRS 8GB
Memory RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905471-030.A00LF 8GB
Kingston 9905471-030.A00LF 8GB
Memory RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3200C16-16GTZ 16GB
G Skill Intl F4-3200C16-16GTZ 16GB
Memory RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Essencore Limited IM48GU88N24-FFFHA0 8GB
Essencore Limited IM48GU88N24-FFFHA0 8GB
Memory RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
Memory RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
V-Color Technology Inc. TL48G24S815RGB 8GB
V-Color Technology Inc. TL48G24S815RGB 8GB
Memory RAM
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Crucial Technology CT32G4DFD8266.C16FE 32GB
Crucial Technology CT32G4DFD8266.C16FE 32GB
Memory RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
Memory RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3600C16-16GTRGC 16GB
G Skill Intl F4-3600C16-16GTRGC 16GB
Memory RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Memory RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
Memory RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
Memory RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
MDT Technologies GmbH MDT 512M DDR2-66 512MB
MDT Technologies GmbH MDT 512M DDR2-66 512MB
Memory RAM
Samsung M4 70T5663QZ3-CF7 2GB
Samsung M4 70T5663QZ3-CF7 2GB
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
Memory RAM