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Samsung M3 78T6553EZS-CF7 512MB
SK Hynix HMAA1GU6CJR6N-XN 8GB

Samsung M3 78T6553EZS-CF7 512MB vs SK Hynix HMAA1GU6CJR6N-XN 8GB

Overall score
star star star star star
Samsung M3 78T6553EZS-CF7 512MB

Samsung M3 78T6553EZS-CF7 512MB

Overall score
star star star star star
SK Hynix HMAA1GU6CJR6N-XN 8GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

Differences Specifications Comments

Differences

Samsung M3 78T6553EZS-CF7 512MB Reasons to consider
Samsung M3 78T6553EZS-CF7 512MB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 16.7
    Average value in the tests
  • Faster write speed, GB/s
    2,021.5 left arrow 10.6
    Average value in the tests
SK Hynix HMAA1GU6CJR6N-XN 8GB Reasons to consider
SK Hynix HMAA1GU6CJR6N-XN 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    34 left arrow 47
    Around -38% lower latency
  • Higher memory bandwidth, mbps
    25600 left arrow 6400
    Around 4 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T6553EZS-CF7 512MB
SK Hynix HMAA1GU6CJR6N-XN 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    47 left arrow 34
  • Read speed, GB/s
    3,575.4 left arrow 16.7
  • Write speed, GB/s
    2,021.5 left arrow 10.6
  • Memory bandwidth, mbps
    6400 left arrow 25600
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    563 left arrow 2789

Samsung M3 78T6553EZS-CF7 512MB RAM comparisons

Corsair CM5S16GM4800A40N2 16GB
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SK Hynix HMAA1GU6CJR6N-XN 8GB RAM comparisons

Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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