RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
20.5
Average value in the tests
Faster write speed, GB/s
2,622.0
15.5
Average value in the tests
Reasons to consider
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Report a bug
Below the latency in the PassMark tests, ns
31
77
Around -148% lower latency
Higher memory bandwidth, mbps
25600
5300
Around 4.83 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
31
Read speed, GB/s
3,405.2
20.5
Write speed, GB/s
2,622.0
15.5
Memory bandwidth, mbps
5300
25600
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
5-5-5-15 / 667 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
763
3649
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston KF2666C15S4/8G 8GB
Kingston 9965516-430.A00G 16GB
Crucial Technology CT16G4DFD824A.C16FBR 16GB
Samsung M3 93T5750CZA-CE6 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400
Hexon Technology Pte Ltd HEXON 1GB
Kingston 9905712-008.A00G 16GB
A-DATA Technology DQKD1A08 1GB
Apacer Technology 78.CAGR4.DFC0B 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Micron Technology 16ATF2G64AZ-2G3A1 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Samsung M391A1G43DB0-CPB 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMK16GX4M2A2666C16 8GB
Kingston 9905403-444.A00LF 4GB
Mushkin MR[A/B]4U360JNNM8G 8GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
SK Hynix HYMP164U64CP6-Y5 512MB
Kingston 9905668-001.A00G 8GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston HP32D4U8S8HC-8X 8GB
Kingston 99U5474-038.A00LF 4GB
Apacer Technology D22.2221ZA.001 8GB
Report a bug
×
Bug description
Source link