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Samsung M378B5673FH0-CH9 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

Samsung M378B5673FH0-CH9 2GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

Overall score
star star star star star
Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Overall score
star star star star star
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

Differences Specifications Comments

Differences

Samsung M378B5673FH0-CH9 2GB Reasons to consider
Samsung M378B5673FH0-CH9 2GB
Report a bug
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB Reasons to consider
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    30 left arrow 35
    Around -17% lower latency
  • Faster reading speed, GB/s
    16.9 left arrow 14.4
    Average value in the tests
  • Faster write speed, GB/s
    13.4 left arrow 9.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5673FH0-CH9 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    35 left arrow 30
  • Read speed, GB/s
    14.4 left arrow 16.9
  • Write speed, GB/s
    9.5 left arrow 13.4
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2321 left arrow 3257

Samsung M378B5673FH0-CH9 2GB RAM comparisons

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB RAM comparisons

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RAM Latency Calculator
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