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Samsung M378B5673FH0-CH9 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
比较
Samsung M378B5673FH0-CH9 2GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
总分
Samsung M378B5673FH0-CH9 2GB
总分
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5673FH0-CH9 2GB
报告一个错误
需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
报告一个错误
低于PassMark测试中的延时,ns
30
35
左右 -17% 更低的延时
更快的读取速度,GB/s
16.9
14.4
测试中的平均数值
更快的写入速度,GB/s
13.4
9.5
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Samsung M378B5673FH0-CH9 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
35
30
读取速度,GB/s
14.4
16.9
写入速度,GB/s
9.5
13.4
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2321
3257
Samsung M378B5673FH0-CH9 2GB RAM的比较
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB RAM的比较
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston KTD3KX-MIB 8GB
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Crucial Technology CT16G4SFD824A.M16FA 16GB
G Skill Intl F5-5600J4040C16G 16GB
Asgard VMA44UI-MEC1U2AW2 32GB
Samsung M471B5673FH0-CF8 2GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
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