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Samsung M378T5663QZ3-CF7 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Compare
Samsung M378T5663QZ3-CF7 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Overall score
Samsung M378T5663QZ3-CF7 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378T5663QZ3-CF7 2GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Report a bug
Below the latency in the PassMark tests, ns
41
56
Around -37% lower latency
Faster reading speed, GB/s
7.8
4
Average value in the tests
Faster write speed, GB/s
6.1
1,813.5
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378T5663QZ3-CF7 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
56
41
Read speed, GB/s
4,387.7
7.8
Write speed, GB/s
1,813.5
6.1
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
693
1512
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Frequency (Mhz) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
0 ns
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