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Samsung M386B4G70DM0-CMA4 32GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Compare
Samsung M386B4G70DM0-CMA4 32GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Overall score
Samsung M386B4G70DM0-CMA4 32GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M386B4G70DM0-CMA4 32GB
Report a bug
Below the latency in the PassMark tests, ns
52
56
Around 7% lower latency
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Report a bug
Faster reading speed, GB/s
20.1
9.7
Average value in the tests
Faster write speed, GB/s
10.5
7.2
Average value in the tests
Higher memory bandwidth, mbps
19200
14900
Around 1.29 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M386B4G70DM0-CMA4 32GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
52
56
Read speed, GB/s
9.7
20.1
Write speed, GB/s
7.2
10.5
Memory bandwidth, mbps
14900
19200
Other
Description
PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
9-10-9-28 / 1866 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2173
2455
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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