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Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-2400C17-4GVR 4GB
Compare
Samsung M4 70T2953EZ3-CE6 1GB vs G Skill Intl F4-2400C17-4GVR 4GB
Overall score
Samsung M4 70T2953EZ3-CE6 1GB
Overall score
G Skill Intl F4-2400C17-4GVR 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T2953EZ3-CE6 1GB
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Faster reading speed, GB/s
3
15.2
Average value in the tests
Reasons to consider
G Skill Intl F4-2400C17-4GVR 4GB
Report a bug
Below the latency in the PassMark tests, ns
25
73
Around -192% lower latency
Faster write speed, GB/s
12.0
1,423.3
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-2400C17-4GVR 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
73
25
Read speed, GB/s
3,510.5
15.2
Write speed, GB/s
1,423.3
12.0
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
476
2740
Samsung M4 70T2953EZ3-CE6 1GB RAM comparisons
Samsung M4 70T2864EH3-CF7 1GB
G Skill Intl F4-2400C15-4GRB 4GB
G Skill Intl F4-2400C17-4GVR 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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