RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B1G73DB0-YK0 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Compare
Samsung M471B1G73DB0-YK0 8GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Overall score
Samsung M471B1G73DB0-YK0 8GB
Overall score
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B1G73DB0-YK0 8GB
Report a bug
Below the latency in the PassMark tests, ns
45
71
Around 37% lower latency
Faster write speed, GB/s
8.1
6.4
Average value in the tests
Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
Faster reading speed, GB/s
15.6
11.9
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B1G73DB0-YK0 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
45
71
Read speed, GB/s
11.9
15.6
Write speed, GB/s
8.1
6.4
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2077
1650
Samsung M471B1G73DB0-YK0 8GB RAM comparisons
Crucial Technology CT102464BF160B.C16 8GB
Kingston KTP9W1-MID 16GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5474-023.A00LF 4GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
Kingston 99U5584-010.A00LF 4GB
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
Samsung M471B1G73DB0-YK0 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Neo Forza NMUD416E82-3600 16GB
Kingston 9965516-112.A00LF 16GB
SK Hynix HMA82GS6JJR8N-VK 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
Kingston 9965516-112.A00LF 16GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
A-DATA Technology DDR3 1333G 2GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Crucial Technology CT102464BF160B.C16 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N
Samsung M3 93T5750CZA-CE6 2GB
Kingston KHX3000C15D4/8GX 8GB
Samsung M378B5273CH0-CH9 4GB
Corsair CMT64GX4M4C3466C16 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Report a bug
×
Bug description
Source link