RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5673FH0-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
Compare
Samsung M471B5673FH0-CF8 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
Overall score
Samsung M471B5673FH0-CF8 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5673FH0-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
30
71
Around 58% lower latency
Faster reading speed, GB/s
10.6
6.1
Average value in the tests
Faster write speed, GB/s
6.8
4.8
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
Report a bug
Higher memory bandwidth, mbps
10600
8500
Around 1.25 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5673FH0-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
30
71
Read speed, GB/s
10.6
6.1
Write speed, GB/s
6.8
4.8
Memory bandwidth, mbps
8500
10600
Other
Description
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
Timings / Clock speed
7-7-7-20 / 1066 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)
1479
1092
Samsung M471B5673FH0-CF8 2GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB RAM comparisons
Kingston 9905711-035.A00G 8GB
G Skill Intl F4-3200C16-8GSX 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393A1G40DB0-CPB 8GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
Samsung M471B5673FH0-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C
G Skill Intl F5-5600J4040C16G 16GB
AMD R948G2806U2S 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-3600C14-16GTZN 16GB
Kingston 99U5584-005.A00LF 4GB
G Skill Intl F4-3000C15-4GVRB 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CMK8GX4M2C3000C16 4GB
Samsung M471A1G44AB0-CWE 8GB
Samsung M391A1G43DB0-CPB 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BL32G32C16U4B.M16FB1 32GB
takeMS International AG TMS2GB264D083805EV 2GB
Kingston 9905625-066.A00G 16GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CB8GS2400.C8D 8GB
Kingston 99U5584-004.A00LF 4GB
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB
SK Hynix HYMP125U64CP8-S6 2GB
G Skill Intl F4-3600C14-8GTRGB 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
Report a bug
×
Bug description
Source link