RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Compare
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Overall score
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Report a bug
Faster reading speed, GB/s
2
14.6
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Report a bug
Below the latency in the PassMark tests, ns
27
96
Around -256% lower latency
Faster write speed, GB/s
10.5
1,336.0
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
96
27
Read speed, GB/s
2,725.2
14.6
Write speed, GB/s
1,336.0
10.5
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
438
2409
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM comparisons
takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB RAM comparisons
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
AMD R534G1601U1S-UO 4GB
Mushkin MRA4S320GJJM32G 32GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Corsair CMK4GX4M1A2400C14 4GB
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-3600C16-8GTZRC 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology BL16G32C16S4B.16FE 16GB
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
A-DATA Technology ADOVE1A0834E 1GB
Kingston 9905622-025.A00G 4GB
Corsair CMZ16GX3M2A1866C9 8GB
Samsung M378A2K43CB1-CTD 16GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-2666C16-4GRB 4GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CMK16GX4M2E4333C19 8GB
Samsung M378B5673EH1-CF8 2GB
AMD R744G2606U1S 4GB
Kingston 9905403-038.A00LF 4GB
Gloway International (HK) STK4U2400D17161C 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
AMD AE34G1601U1 4GB
Samsung M378A2K43DB1-CTD 16GB
Report a bug
×
Bug description
Source link