RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Unifosa Corporation GU502203EP0201 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Compare
Unifosa Corporation GU502203EP0201 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Overall score
Unifosa Corporation GU502203EP0201 1GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Unifosa Corporation GU502203EP0201 1GB
Report a bug
Below the latency in the PassMark tests, ns
25
27
Around 7% lower latency
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Report a bug
Faster reading speed, GB/s
14.6
12.6
Average value in the tests
Faster write speed, GB/s
10.5
7.7
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Unifosa Corporation GU502203EP0201 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
27
Read speed, GB/s
12.6
14.6
Write speed, GB/s
7.7
10.5
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1381
2409
Unifosa Corporation GU502203EP0201 1GB RAM comparisons
AMD R334G1339U2S 4GB
Dust Leopard DDR4-2400 C16 8GB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB RAM comparisons
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M395T5160QZ4-CE66 2GB
Kingston KHX2400C15D4/8G 8GB
Kingston KF552C40-16 16GB
Corsair CM4B4G1J2400A14K 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 9905744-066.A00G 32GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Crucial Technology BLS8G4D240FSEK.8FBR 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Apacer Technology 78.C1GMM.BAC0B 8GB
Crucial Technology CT25664BA1339.M8FK 2GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CB8GS2666.C8ET 8GB
Kingston 9905471-002.A00LF 2GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston 9965662-008.A01G 16GB
Samsung M393B5170FH0-CK0 4GB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS4G4D26BFSE.8FBD2 4GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology BL32G32C16U4W.M16FB1 32GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3200C14-32GTZR 32GB
Report a bug
×
Bug description
Source link