RAM
DDR5
DDR4
DDR3
DDR2
Sobre el sitio
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Sobre el sitio
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Seleccionar RAM 1
Seleccionar RAM 2
Compara
DDR2 Lista de RAM
Todos los módulos de memoria, ordenados por latencia creciente
№
Ancho de banda
Latencia, ns
Velocidad de lectura, GB/s
Velocidad de escritura, GB/s
№
1701
RAM
A-DATA Technology DQKD1A16 1GB
Latency
66
Read speed
2,964.8
Write speed
1,231.0
№
1702
RAM
A-DATA Technology DQVE1908 512MB
Latency
66
Read speed
2,775.5
Write speed
1,557.9
№
1703
RAM
Micron Technology 8HTF12864HZ-800H1 1GB
Latency
66
Read speed
1,340.2
Write speed
1,111.5
№
1704
RAM
Just Young Computer JINGYI 4G DDR2 800 4GB
Latency
66
Read speed
5,441.5
Write speed
3,768.4
№
1705
RAM
Swissbit MEU01G64D5BF1EP-2A 1GB
Latency
66
Read speed
5,076.9
Write speed
3,270.5
№
1706
RAM
Kingmax Semiconductor 2GB
Latency
66
Read speed
5,329.8
Write speed
3,821.5
№
1707
RAM
Micron Technology 16HTF12864HY-53EF1 1GB
Latency
66
Read speed
2,798.3
Write speed
1,142.5
№
1708
RAM
Micron Technology 16HTF12864HY-667D3 1GB
Latency
66
Read speed
2,565.2
Write speed
1,222.4
№
1709
RAM
Nanya Technology NT1GT64UH8D0FN-AD 1GB
Latency
66
Read speed
3,316.1
Write speed
1,569.0
№
1710
RAM
AENEON AET760SD00-370A98X 1GB
Latency
66
Read speed
1,651.6
Write speed
688.0
№
1711
RAM
takeMS International AG TMQ2GB264D083805EV 2GB
Latency
66
Read speed
2,936.2
Write speed
1,647.9
№
1712
RAM
takeMS International AG TMS1GB264C081-665U 1GB
Latency
66
Read speed
3,434.3
Write speed
1,798.8
№
1713
RAM
Samsung M4 70T5663E 2GB
Latency
66
Read speed
1,341.7
Write speed
1,351.3
№
1714
RAM
Nanya Technology NT2GT64U8HC0BN-3C 2GB
Latency
66
Read speed
3,612.6
Write speed
1,493.5
№
1715
RAM
Samsung M4 70T5663EH3-CF7 2GB
Latency
66
Read speed
4,323.0
Write speed
1,906.1
№
1716
RAM
Qimonda 64T128000EU2.5C2 1GB
Latency
66
Read speed
3,752.8
Write speed
2,021.2
№
1717
RAM
takeMS International AG TMS1GB264D082805CP 1GB
Latency
66
Read speed
2,396.3
Write speed
1,382.3
№
1718
RAM
takeMS International AG TMS1GS264C081665KQ 1GB
Latency
66
Read speed
3,637.8
Write speed
1,664.2
№
1719
RAM
Micron Technology 16HTF25664HZ-800J1 2GB
Latency
66
Read speed
3,842.8
Write speed
1,569.9
№
1720
RAM
Micron Technology 16HTF51264HZ-800C1 4GB
Latency
66
Read speed
4,519.0
Write speed
2,220.2
«
83
84
85
86
87
88
»
Últimas comparaciones
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Ramaxel Technology RMSA3260KC78HAF-2666 8GB
Kingston 16KTF1G64HZ-1G6E1 8GB
Samsung M471A2K43CB1-CTCT 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 9905701-011.A00G 16GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-2133C15-4GRS 4GB
Kingston KVR533D2N4 512MB
Kingston MSI24D4S7D8MB-8 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston 9905625-011.A00G 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M471A2K43CB1-CRC 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
G Skill Intl F4-4200C19-4GTZ 4GB
Samsung M3 78T3354BZ0-CCC 256MB
SK Hynix HMAA4GS6AJR8N-VK 32GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT8G4DFS8266.K8FB 8GB
Kingston ACR16D3LS1NGG/2G 2GB
Corsair CMD16GX4M2B3200C16 8GB
Samsung M393B1G70BH0-YK0 8GB
Apacer Technology GD2.1827CS.003 8GB
Informar de un error
×
Bug description
Source link