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DDR2 Liste de RAM
Tous les modules de mémoire, triés par latence croissante.
№
Bande passante
Latency, ns
Vitesse de lecture, GB/s
Vitesse d'écriture, GB/s
№
1701
RAM
A-DATA Technology DQKD1A16 1GB
Latency
66
Read speed
2,964.8
Write speed
1,231.0
№
1702
RAM
A-DATA Technology DQVE1908 512MB
Latency
66
Read speed
2,775.5
Write speed
1,557.9
№
1703
RAM
Micron Technology 8HTF12864HZ-800H1 1GB
Latency
66
Read speed
1,340.2
Write speed
1,111.5
№
1704
RAM
Just Young Computer JINGYI 4G DDR2 800 4GB
Latency
66
Read speed
5,441.5
Write speed
3,768.4
№
1705
RAM
Swissbit MEU01G64D5BF1EP-2A 1GB
Latency
66
Read speed
5,076.9
Write speed
3,270.5
№
1706
RAM
Kingmax Semiconductor 2GB
Latency
66
Read speed
5,329.8
Write speed
3,821.5
№
1707
RAM
Micron Technology 16HTF12864HY-53EF1 1GB
Latency
66
Read speed
2,798.3
Write speed
1,142.5
№
1708
RAM
Micron Technology 16HTF12864HY-667D3 1GB
Latency
66
Read speed
2,565.2
Write speed
1,222.4
№
1709
RAM
Nanya Technology NT1GT64UH8D0FN-AD 1GB
Latency
66
Read speed
3,316.1
Write speed
1,569.0
№
1710
RAM
AENEON AET760SD00-370A98X 1GB
Latency
66
Read speed
1,651.6
Write speed
688.0
№
1711
RAM
takeMS International AG TMQ2GB264D083805EV 2GB
Latency
66
Read speed
2,936.2
Write speed
1,647.9
№
1712
RAM
takeMS International AG TMS1GB264C081-665U 1GB
Latency
66
Read speed
3,434.3
Write speed
1,798.8
№
1713
RAM
Samsung M4 70T5663E 2GB
Latency
66
Read speed
1,341.7
Write speed
1,351.3
№
1714
RAM
Nanya Technology NT2GT64U8HC0BN-3C 2GB
Latency
66
Read speed
3,612.6
Write speed
1,493.5
№
1715
RAM
Samsung M4 70T5663EH3-CF7 2GB
Latency
66
Read speed
4,323.0
Write speed
1,906.1
№
1716
RAM
Qimonda 64T128000EU2.5C2 1GB
Latency
66
Read speed
3,752.8
Write speed
2,021.2
№
1717
RAM
takeMS International AG TMS1GB264D082805CP 1GB
Latency
66
Read speed
2,396.3
Write speed
1,382.3
№
1718
RAM
takeMS International AG TMS1GS264C081665KQ 1GB
Latency
66
Read speed
3,637.8
Write speed
1,664.2
№
1719
RAM
Micron Technology 16HTF25664HZ-800J1 2GB
Latency
66
Read speed
3,842.8
Write speed
1,569.9
№
1720
RAM
Micron Technology 16HTF51264HZ-800C1 4GB
Latency
66
Read speed
4,519.0
Write speed
2,220.2
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G Skill Intl F4-4133C17-8GTZR 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
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