RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Sélectionner RAM 1
Sélectionner RAM 2
Comparez
DDR2 Liste de RAM
Tous les modules de mémoire, triés par latence croissante.
№
Bande passante
Latency, ns
Vitesse de lecture, GB/s
Vitesse d'écriture, GB/s
№
621
RAM
Corsair CM2X2048-6400C4DHX 2GB
Latency
52
Read speed
5,099.1
Write speed
2,198.7
№
622
RAM
Samsung M3 91T2953EZ3-CE6 1GB
Latency
52
Read speed
4,834.3
Write speed
2,266.0
№
623
RAM
Samsung M3 91T2953GZ3-CF7 1GB
Latency
52
Read speed
4,672.4
Write speed
1,906.4
№
624
RAM
Infineon (Siemens) 72T64020HR5A 512MB
Latency
52
Read speed
3,539.2
Write speed
1,725.1
№
625
RAM
Infineon (Siemens) 72T128000HR5A 1GB
Latency
52
Read speed
3,517.4
Write speed
1,569.3
№
626
RAM
Southland Microsystems 40002105-01 2GB
Latency
52
Read speed
4,539.0
Write speed
1,937.9
№
627
RAM
Samsung M3 91T5663QZ3-CF7 2GB
Latency
52
Read speed
5,351.5
Write speed
2,366.0
№
628
RAM
SpecTek Incorporated CONQUR6672GB-A023- 2GB
Latency
52
Read speed
3,753.7
Write speed
1,446.3
№
629
RAM
Micron Technology 9HTF12872AY-667G1 1GB
Latency
52
Read speed
3,705.4
Write speed
1,354.1
№
630
RAM
Micron Technology 9HTF12872AY-800E1 1GB
Latency
52
Read speed
5,102.4
Write speed
2,059.8
№
631
RAM
A-DATA Technology HYQVE1A16 1GB
Latency
52
Read speed
4,639.1
Write speed
1,962.8
№
632
RAM
Samsung M3 93T2953BZ0-CCC 1GB
Latency
52
Read speed
2,730.0
Write speed
1,527.9
№
633
RAM
Samsung M3 93T2953CZ3-CCC 1GB
Latency
52
Read speed
3,594.4
Write speed
1,633.3
№
634
RAM
A-DATA Technology MIOPE1B163BZ 2GB
Latency
52
Read speed
4,589.3
Write speed
1,827.7
№
635
RAM
Micron Technology 16HTF12864AY-667A1 1GB
Latency
52
Read speed
3,146.6
Write speed
876.0
№
636
RAM
Samsung M3 93T5663QZA-CE6 2GB
Latency
52
Read speed
3,969.0
Write speed
1,801.3
№
637
RAM
I’M Intelligent Memory Ltd. 24605 2GB
Latency
52
Read speed
4,700.1
Write speed
2,036.9
№
638
RAM
Nanya Technology NT1GT64U8HB0BY-3C 1GB
Latency
52
Read speed
4,828.1
Write speed
2,098.3
№
639
RAM
ProMos/Mosel Vitelic V916764K24QAFW-E4 512MB
Latency
52
Read speed
3,611.3
Write speed
1,768.8
№
640
RAM
Kingston 9905321-032.A00LF 2GB
Latency
52
Read speed
4,704.1
Write speed
2,290.6
«
29
30
31
32
33
34
»
Dernières comparaisons
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMK16GX4M4A2133C13 4GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-2133C15-8GRK 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Transcend Information JM2666HSB-16G 16GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT4G4DFS8213.C8FBR2 4GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
Kingston 9965433-034.A00LF 4GB
SK Hynix GKE800SO102408-2400 8GB
Samsung M471B5173DB0-YK0 4GB
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMK32GX4M4K4266C19 8GB
Samsung M471B5273DH0-CK0 4GB
Dust Leopard DDR4-2400 C16 8GB 8GB
Kingston KHX1600C9S3L/8G 8GB
G Skill Intl F4-2400C15-8GFX 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CMH16GX4M2Z3200C16 8GB
A-DATA Technology ADOVE1A0834E 1GB
Essencore Limited IM44GU48N28-GGGHM 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
Signaler un bogue
×
Bug description
Source link