RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Seleccionar RAM 1
Seleccionar RAM 2
Comparar
DDR2 Lista RAM
Todos os módulos de memória, ordenados por latência crescente
№
Largura de banda
Latência, ns
Velocidade de leitura, GB/s
Velocidade de escrita, GB/s
№
621
RAM
Corsair CM2X2048-6400C4DHX 2GB
Latency
52
Read speed
5,099.1
Write speed
2,198.7
№
622
RAM
Samsung M3 91T2953EZ3-CE6 1GB
Latency
52
Read speed
4,834.3
Write speed
2,266.0
№
623
RAM
Samsung M3 91T2953GZ3-CF7 1GB
Latency
52
Read speed
4,672.4
Write speed
1,906.4
№
624
RAM
Infineon (Siemens) 72T64020HR5A 512MB
Latency
52
Read speed
3,539.2
Write speed
1,725.1
№
625
RAM
Infineon (Siemens) 72T128000HR5A 1GB
Latency
52
Read speed
3,517.4
Write speed
1,569.3
№
626
RAM
Southland Microsystems 40002105-01 2GB
Latency
52
Read speed
4,539.0
Write speed
1,937.9
№
627
RAM
Samsung M3 91T5663QZ3-CF7 2GB
Latency
52
Read speed
5,351.5
Write speed
2,366.0
№
628
RAM
SpecTek Incorporated CONQUR6672GB-A023- 2GB
Latency
52
Read speed
3,753.7
Write speed
1,446.3
№
629
RAM
Micron Technology 9HTF12872AY-667G1 1GB
Latency
52
Read speed
3,705.4
Write speed
1,354.1
№
630
RAM
Micron Technology 9HTF12872AY-800E1 1GB
Latency
52
Read speed
5,102.4
Write speed
2,059.8
№
631
RAM
A-DATA Technology HYQVE1A16 1GB
Latency
52
Read speed
4,639.1
Write speed
1,962.8
№
632
RAM
Samsung M3 93T2953BZ0-CCC 1GB
Latency
52
Read speed
2,730.0
Write speed
1,527.9
№
633
RAM
Samsung M3 93T2953CZ3-CCC 1GB
Latency
52
Read speed
3,594.4
Write speed
1,633.3
№
634
RAM
A-DATA Technology MIOPE1B163BZ 2GB
Latency
52
Read speed
4,589.3
Write speed
1,827.7
№
635
RAM
Micron Technology 16HTF12864AY-667A1 1GB
Latency
52
Read speed
3,146.6
Write speed
876.0
№
636
RAM
Samsung M3 93T5663QZA-CE6 2GB
Latency
52
Read speed
3,969.0
Write speed
1,801.3
№
637
RAM
I’M Intelligent Memory Ltd. 24605 2GB
Latency
52
Read speed
4,700.1
Write speed
2,036.9
№
638
RAM
Nanya Technology NT1GT64U8HB0BY-3C 1GB
Latency
52
Read speed
4,828.1
Write speed
2,098.3
№
639
RAM
ProMos/Mosel Vitelic V916764K24QAFW-E4 512MB
Latency
52
Read speed
3,611.3
Write speed
1,768.8
№
640
RAM
Kingston 9905321-032.A00LF 2GB
Latency
52
Read speed
4,704.1
Write speed
2,290.6
«
29
30
31
32
33
34
»
Últimas comparações
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905624-010.A00G 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3200C14-16GTZKY 16GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Corsair CMK4GX4M1D2400C14 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Kingston ACR26D4U9D8ME-16 16GB
SK Hynix HMT351S6CFR8C-PB 4GB
G Skill Intl F4-3200C14-16GVK 16GB
Team Group Inc. Team-Elite-1333 4GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Teikon TMA851S6CJR6N-VKSC 4GB
Samsung M4 70T2864QZ3-CF7 1GB
Kingston 99U5702-020.A00G 8GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology BL32G32C16S4B.M16FB1 32GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
Samsung M378B5173BH0-CH9 4GB
Kingston KHX2666C16/16G 16GB
Samsung M393B1K70CH0-CH9 8GB
Micron Technology M471A1K43CB1-CTD 8GB
Samsung M471B1G73DB0-YK0 8GB
Apacer Technology 78.CAGN4.4020B 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-4000C14-8GTZR 8GB
Relatar um erro
×
Bug description
Source link
Русский 
English 
Español 
Deutsch 
Français 
Italiano 
Polski 
中文 
日本語 
