A-DATA Technology DOVF1B163G2G 2GB vs G Skill Intl F4-3466C16-8GTZR 8GB

総合得点

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

総合得点

G Skill Intl F4-3466C16-8GTZR 8GB

G Skill Intl F4-3466C16-8GTZR 8GB

相違点仕様コメント

相違点

A-DATA Technology DOVF1B163G2G 2GB

考慮すべき理由
A-DATA Technology DOVF1B163G2G 2GB

バグを報告する

読み出し速度の高速化、GB/s

4 17.6

テスト平均値

G Skill Intl F4-3466C16-8GTZR 8GB

考慮すべき理由
G Skill Intl F4-3466C16-8GTZR 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

30 56

周辺 -87% 低遅延
書き込み速度の高速化、GB/s

15.5 1,925.7

テスト平均値
より高いメモリ帯域幅、mbps

17000 6400

周辺 2.66 高帯域

仕様

技術仕様の完全リスト

A-DATA Technology DOVF1B163G2G 2GB

G Skill Intl F4-3466C16-8GTZR 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

56 30
読み出し速度、GB/s

4,315.2 17.6
書き込み速度、GB/秒

1,925.7 15.5
メモリ帯域幅、mbps

6400 17000

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
タイミング / クロック速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

658 3564

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

G Skill Intl F4-3466C16-8GTZR 8GB

G Skill Intl F4-3466C16-8GTZR 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Aquarius Production Company LLC 16G-D4-2666-MR 4GB

Aquarius Production Company LLC 16G-D4-2666-MR 4GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3200C16-16GTZKO 16GB

G Skill Intl F4-3200C16-16GTZKO 16GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-4400C19-32GVK 32GB

G Skill Intl F4-4400C19-32GVK 32GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Corsair CMT32GX4M4C3466C16 8GB

Corsair CMT32GX4M4C3466C16 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3200C16-8GTZRX 8GB

G Skill Intl F4-3200C16-8GTZRX 8GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMWX8GD3200C16W4 8GB

Corsair CMWX8GD3200C16W4 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Crucial Technology CT8G4SFD8213.C16FBD2 8GB

Crucial Technology CT8G4SFD8213.C16FBD2 8GB

Samsung M378A1K43BB2-CRC 8GB

Samsung M378A1K43BB2-CRC 8GB

Corsair CMK64GX4M4A2666C16 16GB

Corsair CMK64GX4M4A2666C16 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology BL16G36C16U4RL.M16FE 16GB

Crucial Technology BL16G36C16U4RL.M16FE 16GB