Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Micron Technology 16GB 2133MHz DIMM 16GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

総合得点

Micron Technology 16GB 2133MHz DIMM 16GB

Micron Technology 16GB 2133MHz DIMM 16GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

バグを報告する

Micron Technology 16GB 2133MHz DIMM 16GB

考慮すべき理由
Micron Technology 16GB 2133MHz DIMM 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

23 62

周辺 -170% 低遅延
読み出し速度の高速化、GB/s

17.3 7.4

テスト平均値
書き込み速度の高速化、GB/s

13.2 5.9

テスト平均値
より高いメモリ帯域幅、mbps

17000 10600

周辺 1.6 高帯域

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Micron Technology 16GB 2133MHz DIMM 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

62 23
読み出し速度、GB/s

7.4 17.3
書き込み速度、GB/秒

5.9 13.2
メモリ帯域幅、mbps

10600 17000

Other

商品説明

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
タイミング / クロック速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

1612 3233

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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