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DDR2 Lista pamięci RAM
Wszystkie moduły pamięci, posortowane według rosnącego opóźnienia
№
Szerokość pasma
Opóźnienie, ns
Prędkość odczytu, GB/s
Prędkość zapisu, GB/s
№
2321
RAM
Kingston 992RE04G800UV-FCDT 4GB
Latency
88
Read speed
3,824.7
Write speed
2,406.0
№
2322
RAM
Power Quotient International MECDG421LA0101 1GB
Latency
89
Read speed
1,917.3
Write speed
729.1
№
2323
RAM
Samsung M4 70T2864FB3-CF7 1GB
Latency
89
Read speed
1,100.9
Write speed
932.4
№
2324
RAM
Qimonda 64T128020EML5B 1GB
Latency
89
Read speed
804.8
Write speed
551.4
№
2325
RAM
Samsung M395T5160CZ4-CE66 4GB
Latency
89
Read speed
2,995.0
Write speed
2,067.1
№
2326
RAM
Samsung M395T5750EZ4-CE65 2GB
Latency
89
Read speed
2,597.7
Write speed
1,921.6
№
2327
RAM
Micron Technology 36HTS1G72FY667A1D4 8GB
Latency
89
Read speed
2,825.1
Write speed
2,079.1
№
2328
RAM
Micron Technology DT3B122GX4GBV-800I 4GB
Latency
89
Read speed
2,405.3
Write speed
1,554.6
№
2329
RAM
Crucial Technology wIPVTRegTTU 1GB
Latency
89
Read speed
2,528.8
Write speed
643.1
№
2330
RAM
Transcend Information TS256MFB72V8U-T 1GB
Latency
89
Read speed
3,124.6
Write speed
2,453.5
№
2331
RAM
Mushkin 991635 (996635) 2GB
Latency
89
Read speed
2,711.0
Write speed
1,813.5
№
2332
RAM
A Force Manufacturing Ltd. 256X72M-80F 2GB
Latency
89
Read speed
2,241.0
Write speed
1,286.4
№
2333
RAM
Elpida EBE21UE8AESA-6E-F 2GB
Latency
89
Read speed
2,468.7
Write speed
1,453.1
№
2334
RAM
Micron Technology 8HTF12864HDY-53EE1 1GB
Latency
90
Read speed
1,787.3
Write speed
803.6
№
2335
RAM
Nanya Technology NT1GT64UH8C0FN-3C 1GB
Latency
90
Read speed
2,616.5
Write speed
1,420.3
№
2336
RAM
Swissbit SEN12864C2B72EP-30 1GB
Latency
90
Read speed
1,943.8
Write speed
1,685.4
№
2337
RAM
Kingston 9905431-006.A00LF 512MB
Latency
90
Read speed
2,258.8
Write speed
1,167.2
№
2338
RAM
Nanya Technology NT2GT72U4NB1BD-2C 2GB
Latency
90
Read speed
3,435.0
Write speed
2,517.2
№
2339
RAM
Hynix Semiconductor (Hyundai Electronics) HMP125S6EFR8C-Y5 2GB
Latency
90
Read speed
2,699.0
Write speed
1,140.4
№
2340
RAM
Samsung M395T5750CZ4-CE60 2GB
Latency
90
Read speed
3,053.2
Write speed
1,982.2
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Najnowsze porównania
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK16GX4M2B4266C19 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Essencore Limited KD44GU481-26N1600 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Peak Electronics 256X64M-67E 2GB
SK Hynix GKE800SO51208-2133AH 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CMT32GX4M2C3200C16 16GB
Kingston 99U5474-037.A00LF 4GB
Samsung M393A1G40EB1-CRC 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Kingston KF3200C20S4/32GX 32MB
Kingston 9905403-090.A01LF 4GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
Kingston 9905403-444.A00LF 4GB
Corsair CM4B8G1J2800K14K 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
AMD R5S38G1601U2S 8GB
Crucial Technology BLS8G4D240FSB.M16FAD 8GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT16G4SFD824A.C16FDD 16GB
Samsung M393B1G70QH0-YK0 8GB
Samsung T471A1K43CB1-CRC 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMW32GX4M2Z3600C18 16GB
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