RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
选择RAM 1
选择RAM 2
比较
DDR2 RAM列表
所有内存模块，按延迟增加排序
№
带宽
延迟, ns
读取速度，GB/s
写入速度，GB/s
№
2321
RAM
Kingston 992RE04G800UV-FCDT 4GB
Latency
88
Read speed
3,824.7
Write speed
2,406.0
№
2322
RAM
Power Quotient International MECDG421LA0101 1GB
Latency
89
Read speed
1,917.3
Write speed
729.1
№
2323
RAM
Samsung M4 70T2864FB3-CF7 1GB
Latency
89
Read speed
1,100.9
Write speed
932.4
№
2324
RAM
Qimonda 64T128020EML5B 1GB
Latency
89
Read speed
804.8
Write speed
551.4
№
2325
RAM
Samsung M395T5160CZ4-CE66 4GB
Latency
89
Read speed
2,995.0
Write speed
2,067.1
№
2326
RAM
Samsung M395T5750EZ4-CE65 2GB
Latency
89
Read speed
2,597.7
Write speed
1,921.6
№
2327
RAM
Micron Technology 36HTS1G72FY667A1D4 8GB
Latency
89
Read speed
2,825.1
Write speed
2,079.1
№
2328
RAM
Micron Technology DT3B122GX4GBV-800I 4GB
Latency
89
Read speed
2,405.3
Write speed
1,554.6
№
2329
RAM
Crucial Technology wIPVTRegTTU 1GB
Latency
89
Read speed
2,528.8
Write speed
643.1
№
2330
RAM
Transcend Information TS256MFB72V8U-T 1GB
Latency
89
Read speed
3,124.6
Write speed
2,453.5
№
2331
RAM
Mushkin 991635 (996635) 2GB
Latency
89
Read speed
2,711.0
Write speed
1,813.5
№
2332
RAM
A Force Manufacturing Ltd. 256X72M-80F 2GB
Latency
89
Read speed
2,241.0
Write speed
1,286.4
№
2333
RAM
Elpida EBE21UE8AESA-6E-F 2GB
Latency
89
Read speed
2,468.7
Write speed
1,453.1
№
2334
RAM
Micron Technology 8HTF12864HDY-53EE1 1GB
Latency
90
Read speed
1,787.3
Write speed
803.6
№
2335
RAM
Nanya Technology NT1GT64UH8C0FN-3C 1GB
Latency
90
Read speed
2,616.5
Write speed
1,420.3
№
2336
RAM
Swissbit SEN12864C2B72EP-30 1GB
Latency
90
Read speed
1,943.8
Write speed
1,685.4
№
2337
RAM
Kingston 9905431-006.A00LF 512MB
Latency
90
Read speed
2,258.8
Write speed
1,167.2
№
2338
RAM
Nanya Technology NT2GT72U4NB1BD-2C 2GB
Latency
90
Read speed
3,435.0
Write speed
2,517.2
№
2339
RAM
Hynix Semiconductor (Hyundai Electronics) HMP125S6EFR8C-Y5 2GB
Latency
90
Read speed
2,699.0
Write speed
1,140.4
№
2340
RAM
Samsung M395T5750CZ4-CE60 2GB
Latency
90
Read speed
3,053.2
Write speed
1,982.2
«
114
115
116
117
118
119
»
最新比较
Avant Technology F6451U64F9333G 4GB
Corsair CMK8GX4M1Z3200C16 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston KHX2666C16S4/32G 32GB
Kingston 9905403-444.A00LF 4GB
Kingston 99U5700-014.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-4000C16-8GVK 8GB
Kingston 9905316-106.A02LF 1GB
Transcend Information JM3200HLB-8G 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Kingston 9965589-013.A00G 8GB
Avant Technology F6451U64F9333G 4GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
Kingston 9905403-134.A00LF 2GB
Corsair CMD16GX4M4B3000C15 4GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-3600C19-8GSXWB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8A
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMSX8GX4M1A2666C18 8GB
Corsair CML16GX3M2A1600C10 8GB
Kingston 9905702-019.A00G 8GB
A-DATA Technology DOVF1B163G2G 2GB
Micron Technology 18ASF1G72PDZ-2G3B1 8GB
Kingston 99U5471-020.A00LF 4GB
SK Hynix HMAA2GU6CJR8N-XN 16GB
报告一个错误
×
Bug description
Source link
Русский 
English 
Español 
Português 
Deutsch 
Français 
Italiano 
Polski 
日本語 
