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DDR5
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DDR2
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DDR2 Lista pamięci RAM
Wszystkie moduły pamięci, posortowane według rosnącego opóźnienia
№
Szerokość pasma
Opóźnienie, ns
Prędkość odczytu, GB/s
Prędkość zapisu, GB/s
№
2361
RAM
Micron Technology 36HTF51272PY-80EG1 4GB
Latency
92
Read speed
3,981.8
Write speed
3,326.4
№
2362
RAM
Qimonda 72T256420HFN3SA 2GB
Latency
92
Read speed
3,031.8
Write speed
1,961.0
№
2363
RAM
Qimonda 72T512220EP3SC2 4GB
Latency
92
Read speed
3,268.1
Write speed
2,969.2
№
2364
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP151P
Latency
92
Read speed
3,154.3
Write speed
2,549.7
№
2365
RAM
Kreton Corporation 51523xxxx58x35xxxx 1GB
Latency
92
Read speed
2,188.0
Write speed
1,087.2
№
2366
RAM
ASint Technology B19J5S73DN1 1GB
Latency
92
Read speed
1,115.2
Write speed
500.9
№
2367
RAM
ASint Technology SSY2128M8-JGE3B 1GB
Latency
92
Read speed
2,032.4
Write speed
1,220.6
№
2368
RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Latency
92
Read speed
2,105.4
Write speed
1,266.1
№
2369
RAM
A-DATA Technology HYOPE1A163BZ 1GB
Latency
93
Read speed
2,209.4
Write speed
698.7
№
2370
RAM
Nanya Technology NT2GT72U4NB1BN-3C 2GB
Latency
93
Read speed
2,778.7
Write speed
1,944.4
№
2371
RAM
Qimonda 72T256420HFD3SA 2GB
Latency
93
Read speed
3,417.2
Write speed
1,811.5
№
2372
RAM
Micron Technology 36HTF51272PY-667E1 4GB
Latency
93
Read speed
3,117.0
Write speed
2,346.8
№
2373
RAM
Qimonda 72T512520EFD3SC2 4GB
Latency
93
Read speed
2,753.8
Write speed
1,667.6
№
2374
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP151F
Latency
93
Read speed
2,869.0
Write speed
1,995.3
№
2375
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP151F72CP4D3-S5 2GB
Latency
93
Read speed
3,193.6
Write speed
2,312.7
№
2376
RAM
Kingston UW729-IFA-INTC0S 2GB
Latency
93
Read speed
2,840.9
Write speed
1,753.7
№
2377
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512B
Latency
93
Read speed
2,600.4
Write speed
1,667.1
№
2378
RAM
SK Hynix HYMP151P72CP4-S5 4GB
Latency
93
Read speed
3,029.3
Write speed
2,841.9
№
2379
RAM
SK Hynix HYMP525F72CP4N3-Y5 2GB
Latency
93
Read speed
3,082.1
Write speed
2,086.0
№
2380
RAM
Nanya Technology NT4GT72U4ND0BD-AC 4GB
Latency
94
Read speed
2,649.8
Write speed
2,062.2
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Najnowsze porównania
G Skill Intl F5-6400J3239G16G 16GB
Apacer Technology 78.CAGPN.AZ50C 8GB
SK Hynix HYMP112S64CP6-S6 1GB
G Skill Intl F4-3600C19-16GSXF 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Samsung M471A1A43CB1-CRC 8GB
PUSKILL DDR3 1600 8G 8GB
SK Hynix HMA81GS6CJR8N-UH 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-4133C19-8GTZR 8GB
Samsung M3 78T3354BZ0-CCC 256MB
A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston 9905701-021.A00G 16GB
Samsung M393B2G70BH0-CK0 16GB
Neo Forza NMUD480E82-2666 8GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLS4G4D240FSC.8FARG 4GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
Crucial Technology CT2K102464BD160B 8GB
G Skill Intl F4-3200C14-16GTZ 16GB
Corsair CMX4GX3M2A1600C9 2GB
Crucial Technology CT8G4DFD8213.C16FDR2 8GB
Samsung M386B4G70DM0-CMA4 32GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Kingston 99U5584-001.A00LF 4GB
G Skill Intl F4-3466C18-8GSXW 8GB
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