RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Seleccionar RAM 1
Seleccionar RAM 2
Comparar
DDR2 Lista RAM
Todos os módulos de memória, ordenados por latência crescente
№
Largura de banda
Latência, ns
Velocidade de leitura, GB/s
Velocidade de escrita, GB/s
№
2361
RAM
Micron Technology 36HTF51272PY-80EG1 4GB
Latency
92
Read speed
3,981.8
Write speed
3,326.4
№
2362
RAM
Qimonda 72T256420HFN3SA 2GB
Latency
92
Read speed
3,031.8
Write speed
1,961.0
№
2363
RAM
Qimonda 72T512220EP3SC2 4GB
Latency
92
Read speed
3,268.1
Write speed
2,969.2
№
2364
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP151P
Latency
92
Read speed
3,154.3
Write speed
2,549.7
№
2365
RAM
Kreton Corporation 51523xxxx58x35xxxx 1GB
Latency
92
Read speed
2,188.0
Write speed
1,087.2
№
2366
RAM
ASint Technology B19J5S73DN1 1GB
Latency
92
Read speed
1,115.2
Write speed
500.9
№
2367
RAM
ASint Technology SSY2128M8-JGE3B 1GB
Latency
92
Read speed
2,032.4
Write speed
1,220.6
№
2368
RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Latency
92
Read speed
2,105.4
Write speed
1,266.1
№
2369
RAM
A-DATA Technology HYOPE1A163BZ 1GB
Latency
93
Read speed
2,209.4
Write speed
698.7
№
2370
RAM
Nanya Technology NT2GT72U4NB1BN-3C 2GB
Latency
93
Read speed
2,778.7
Write speed
1,944.4
№
2371
RAM
Qimonda 72T256420HFD3SA 2GB
Latency
93
Read speed
3,417.2
Write speed
1,811.5
№
2372
RAM
Micron Technology 36HTF51272PY-667E1 4GB
Latency
93
Read speed
3,117.0
Write speed
2,346.8
№
2373
RAM
Qimonda 72T512520EFD3SC2 4GB
Latency
93
Read speed
2,753.8
Write speed
1,667.6
№
2374
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP151F
Latency
93
Read speed
2,869.0
Write speed
1,995.3
№
2375
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP151F72CP4D3-S5 2GB
Latency
93
Read speed
3,193.6
Write speed
2,312.7
№
2376
RAM
Kingston UW729-IFA-INTC0S 2GB
Latency
93
Read speed
2,840.9
Write speed
1,753.7
№
2377
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512B
Latency
93
Read speed
2,600.4
Write speed
1,667.1
№
2378
RAM
SK Hynix HYMP151P72CP4-S5 4GB
Latency
93
Read speed
3,029.3
Write speed
2,841.9
№
2379
RAM
SK Hynix HYMP525F72CP4N3-Y5 2GB
Latency
93
Read speed
3,082.1
Write speed
2,086.0
№
2380
RAM
Nanya Technology NT4GT72U4ND0BD-AC 4GB
Latency
94
Read speed
2,649.8
Write speed
2,062.2
«
116
117
118
119
120
121
»
Últimas comparações
Samsung M393B5170FH0-CK0 4GB
Team Group Inc. Team-Elite-2400 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Heoriady M471A1K43CB1-CTD 8GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT16G4DFD824A.C16FE 16GB
Corsair CMX4GX3M2A1600C9 2GB
Apacer Technology D22.23263S.002 16GB
Kingston 9905403-061.A00LF 2GB
Corsair CMD16GX4M2B3866C18 8GB
Samsung M393B1K70CH0-YH9 8GB
Kingston 9905625-139.A00G 16GB
Samsung M471B5273EB0-CK0 4GB
Apacer Technology 78.CAGP7.4020B 8GB
Corsair CML8GX3M2A1600C9 4GB
Corsair CMT16GX4M2K3600C16 8GB
Corsair CMY8GX3M2A2666C10 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
Kingston 99U5474-013.A00LF 2GB
G Skill Intl F4-3333C16-16GVR 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CB8GU2400.C8D 8GB
Kingston 9965525-155.A00LF 8GB
Team Group Inc. TEAMGROUP-UD4-3000 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB
Nanya Technology NT8GA64D88AX3S-HR 8GB
Nanya Technology NT8GC72B4NB1NK-CG 8GB
Relatar um erro
×
Bug description
Source link
Русский 
English 
Español 
Deutsch 
Français 
Italiano 
Polski 
中文 
日本語 
