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DDR2 Lista pamięci RAM
Wszystkie moduły pamięci, posortowane według rosnącego opóźnienia
№
Szerokość pasma
Opóźnienie, ns
Prędkość odczytu, GB/s
Prędkość zapisu, GB/s
№
1301
RAM
Samsung M3 93T5660MZ3-CCC 2GB
Latency
60
Read speed
1,212.7
Write speed
564.6
№
1302
RAM
Micron Technology 16HTF12864AY-667F1 1GB
Latency
60
Read speed
3,603.3
Write speed
1,885.7
№
1303
RAM
ProMos/Mosel Vitelic V916764B24QBFW-E4 512MB
Latency
60
Read speed
3,547.6
Write speed
1,418.7
№
1304
RAM
Kingmax Semiconductor KLCD48F-A8KL5 1GB
Latency
60
Read speed
3,649.3
Write speed
1,648.5
№
1305
RAM
Golden Empire 2GB DDR2 800 CAS=5 2GB
Latency
60
Read speed
4,205.4
Write speed
2,587.4
№
1306
RAM
takeMS International AG BD512TEC916 512MB
Latency
60
Read speed
3,344.2
Write speed
1,512.6
№
1307
RAM
Samsung M4 70T3354BZ0-CCC 256MB
Latency
60
Read speed
1,882.4
Write speed
732.9
№
1308
RAM
Golden Empire CL4-4-4DDR2800 4 2GB
Latency
60
Read speed
3,427.6
Write speed
2,185.4
№
1309
RAM
Qimonda 64T64000HU3SB 512MB
Latency
60
Read speed
3,375.8
Write speed
1,562.8
№
1310
RAM
takeMS International AG TMS1GB264C081805QI 1GB
Latency
60
Read speed
2,585.1
Write speed
1,834.3
№
1311
RAM
Golden Empire CL5-5-5DDR2-667 1GB
Latency
60
Read speed
3,681.4
Write speed
1,504.5
№
1312
RAM
takeMS International AG TMS1GB264C082805AQ 1GB
Latency
60
Read speed
3,668.4
Write speed
1,766.2
№
1313
RAM
Micron Technology 16HTF25664HZ-667H1 2GB
Latency
60
Read speed
3,507.8
Write speed
1,507.2
№
1314
RAM
Kingston HP395317-531-NAB 512MB
Latency
60
Read speed
3,354.1
Write speed
1,332.0
№
1315
RAM
Micron Technology 16HTF25664HZ-800J2 2GB
Latency
60
Read speed
4,111.2
Write speed
1,648.2
№
1316
RAM
Kingmax Semiconductor KLDD48F-B8MO5 1GB
Latency
60
Read speed
3,374.6
Write speed
1,700.1
№
1317
RAM
Crucial Technology CT12864AC800.K8F8 1GB
Latency
60
Read speed
3,687.6
Write speed
1,392.1
№
1318
RAM
Kingmax Semiconductor KLDE88F-B8KN5 2GB
Latency
60
Read speed
3,791.6
Write speed
2,003.6
№
1319
RAM
Kingmax Semiconductor KLDE88F-B8KU5 2GB
Latency
60
Read speed
4,183.9
Write speed
2,098.3
№
1320
RAM
Nanya Technology NT256T64UH4A0F-5A 256MB
Latency
60
Read speed
1,965.0
Write speed
921.3
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Najnowsze porównania
Samsung M4 70T2864QZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-4000C19-16GTZKK 16GB
SK Hynix HMT451U7BFR8C-RD 4GB
G Skill Intl F4-3000C16-16GRS 16GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT8G4DFS824A.M8FD 8GB
Kingston 99U5474-038.A00LF 4GB
Kingston X2YH1K-MIE-NX 16GB
Kingston 99U5474-010.A00LF 2GB
AMD R748G2400S2S 8GB
PNY Electronics PNY 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Transcend Information JM2666HLE-16G 16GB
Samsung M471A1K43CB1-CTD 8GB
Samsung M471A1K43BB1-CRC 8GB
Kingston 9965525-140.A00LF 8GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600
AMD AE34G1601U1 4GB
G Skill Intl F4-2400C16-8GRSB 8GB
Kingston 99U5474-038.A00LF 4GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
Kingston KHX1866C9D3/8GX 8GB
Kingston KHYXPX-HYJ 8GB
Kingston 99U5403-465.A00LF 8GB
G Skill Intl F4-4000C19-8GTZ 8GB
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