RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
选择RAM 1
选择RAM 2
比较
DDR2 RAM列表
所有内存模块，按延迟增加排序
№
带宽
延迟, ns
读取速度，GB/s
写入速度，GB/s
№
1301
RAM
Samsung M3 93T5660MZ3-CCC 2GB
Latency
60
Read speed
1,212.7
Write speed
564.6
№
1302
RAM
Micron Technology 16HTF12864AY-667F1 1GB
Latency
60
Read speed
3,603.3
Write speed
1,885.7
№
1303
RAM
ProMos/Mosel Vitelic V916764B24QBFW-E4 512MB
Latency
60
Read speed
3,547.6
Write speed
1,418.7
№
1304
RAM
Kingmax Semiconductor KLCD48F-A8KL5 1GB
Latency
60
Read speed
3,649.3
Write speed
1,648.5
№
1305
RAM
Golden Empire 2GB DDR2 800 CAS=5 2GB
Latency
60
Read speed
4,205.4
Write speed
2,587.4
№
1306
RAM
takeMS International AG BD512TEC916 512MB
Latency
60
Read speed
3,344.2
Write speed
1,512.6
№
1307
RAM
Samsung M4 70T3354BZ0-CCC 256MB
Latency
60
Read speed
1,882.4
Write speed
732.9
№
1308
RAM
Golden Empire CL4-4-4DDR2800 4 2GB
Latency
60
Read speed
3,427.6
Write speed
2,185.4
№
1309
RAM
Qimonda 64T64000HU3SB 512MB
Latency
60
Read speed
3,375.8
Write speed
1,562.8
№
1310
RAM
takeMS International AG TMS1GB264C081805QI 1GB
Latency
60
Read speed
2,585.1
Write speed
1,834.3
№
1311
RAM
Golden Empire CL5-5-5DDR2-667 1GB
Latency
60
Read speed
3,681.4
Write speed
1,504.5
№
1312
RAM
takeMS International AG TMS1GB264C082805AQ 1GB
Latency
60
Read speed
3,668.4
Write speed
1,766.2
№
1313
RAM
Micron Technology 16HTF25664HZ-667H1 2GB
Latency
60
Read speed
3,507.8
Write speed
1,507.2
№
1314
RAM
Kingston HP395317-531-NAB 512MB
Latency
60
Read speed
3,354.1
Write speed
1,332.0
№
1315
RAM
Micron Technology 16HTF25664HZ-800J2 2GB
Latency
60
Read speed
4,111.2
Write speed
1,648.2
№
1316
RAM
Kingmax Semiconductor KLDD48F-B8MO5 1GB
Latency
60
Read speed
3,374.6
Write speed
1,700.1
№
1317
RAM
Crucial Technology CT12864AC800.K8F8 1GB
Latency
60
Read speed
3,687.6
Write speed
1,392.1
№
1318
RAM
Kingmax Semiconductor KLDE88F-B8KN5 2GB
Latency
60
Read speed
3,791.6
Write speed
2,003.6
№
1319
RAM
Kingmax Semiconductor KLDE88F-B8KU5 2GB
Latency
60
Read speed
4,183.9
Write speed
2,098.3
№
1320
RAM
Nanya Technology NT256T64UH4A0F-5A 256MB
Latency
60
Read speed
1,965.0
Write speed
921.3
«
63
64
65
66
67
68
»
最新比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLE4G4D26AFEA.8FAD 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
V-GEN D4S8GL32A8TS 8GB
AMD R5316G1609U2K 8GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
Kingston KN2M64-ETB 8GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
Kingston K531R8-MIN 4GB
Kingston KHX3200C16D4/8GX 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
Peak Electronics 256X64M-67E 2GB
Crucial Technology BL8G32C16S4B.M8FE1 8GB
Kingston 9905402-665.A00LF 4GB
G Skill Intl F4-3000C15-8GRRB 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT8G4DFD8213.C16FAR2 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFD8213.C16FAR2 8GB
Team Group Inc. Team-Elite-1333 4GB
G Skill Intl F4-4000C18-8GTRS 8GB
报告一个错误
×
Bug description
Source link
Русский 
English 
Español 
Português 
Deutsch 
Français 
Italiano 
Polski 
日本語 
